| 发明名称 |
Schottky semiconductor device |
| 摘要 |
A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal layer of platinum or palladium formed on the first metal layer and a third metal layer superposed on said second metal layer.
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| 申请公布号 |
US4034394(A) |
申请公布日期 |
1977.07.05 |
| 申请号 |
US19760676493 |
申请日期 |
1976.04.13 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO., LTD. |
发明人 |
KAMO, HISAO;KURODA, MASAHIRO;OKANO, SUSUMU |
| 分类号 |
H01L29/93;H01L21/285;H01L29/47;H01L29/864;H01L29/872;(IPC1-7):H01L29/48;H01L29/06;H01L29/16;H01L23/48 |
主分类号 |
H01L29/93 |
| 代理机构 |
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代理人 |
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