| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To achive the expansion of a safe operating region or improvement in current amplification factor hFE by forming a poly Si layer containing oxygen on an emitter region and forming an equivalent electrical barrier therebetween. |
| 申请公布号 |
JPS5279784(A) |
申请公布日期 |
1977.07.05 |
| 申请号 |
JP19750157202 |
申请日期 |
1975.12.26 |
| 申请人 |
SONY CORP |
发明人 |
MATSUSHITA TAKESHI;OOUCHI NORIKAZU |
| 分类号 |
H01L29/80;H01L21/331;H01L21/337;H01L29/08;H01L29/73;H01L29/732;H01L29/808 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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