Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates

摘要

Electrically isolated active device regions are fabricated in GaAs semi-insulating wafers by the implantation therein of sulphur ions. The implanted wafers are then coated with a passivating oxide and annealed at an elevated temperature of 800 DEG C or greater in order to achieve carrier mobilities in excess of 3000 cm2/volt second.