Capacitance memories operated with intermittently-energized integrated circuits

摘要

Capacitance memories operated with intermittently-energized monolithic integrated circuits tend to lose information during periods between the spaced intervals the integrated-circuits are energized. This tendency, attributable to sneak conduction paths in the un-energized integrated circuit, is forestalled by inserting the channel of a field-effect transistor in series with the memory capacitance, which channel is rendered conductive when only the energizing potential is supplied to the integrated circuit.