发明名称 FORMATION OF THIN FILM OF COMPOUND SEMICONDUCTOR MIXED CRYSTALS
摘要 <p>PURPOSE:To simultaneously inject the structural elements for the thin film by depositing a thin film of a group n element on a compound semiconductor substrate of a group n element and a group m element and injecting ions at acceleration energy that makes the flying distance of the group m element longer than the thin film.</p>
申请公布号 JPS5278367(A) 申请公布日期 1977.07.01
申请号 JP19750155253 申请日期 1975.12.25
申请人 NIPPON ELECTRIC CO 发明人 OKABAYASHI HIDEKAZU
分类号 H01L21/265;H01L33/28;H01L33/30 主分类号 H01L21/265
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