| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To achieve the increase in the scale of integration by devising the input and output conductors and gate electrodes of a memory device and the shape and disposition of charge accumulating electrodes. |
| 申请公布号 |
JPS5278389(A) |
申请公布日期 |
1977.07.01 |
| 申请号 |
JP19750155665 |
申请日期 |
1975.12.24 |
| 申请人 |
FUJITSU LTD |
发明人 |
TAKEI AKIRA;TOUGEI YOSHIIKU;HIKA YOSHIHIKO;MIITA TAKASHI;HONDA HIDEO |
| 分类号 |
H01L27/10;G11C11/34;G11C27/04;H01L21/339;H01L21/8242;H01L21/8247;H01L27/04;H01L27/108;H01L29/40;H01L29/762;H01L29/788;H01L29/792 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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