Stress-free semiconductive epitactic film on substrate - with stress-absorbing intermediate layer

摘要

Epitactic deposition of a thin monocrystalline layer of a semiconductive material on a substrate, with an intermediate layer, is improved in that the intermediate layer is formed in such a manner that the difference between the natural interatomic distances in the intermediate layer and the substrate is larger than the difference between these distances in the epitactic layer and the substrate. The thickness of the intermediate layer, however, is such that the actual interatomic distances in the intermediate layer are equal to the natural interatomic distances in the epitactic layer. Used partic. for the prodn. of luminescent diodes and photocathodes. The epitactic layer is free of stresses which are absorbed by the intermediate layer whose thickness is such that stresses do not exceed breaking threshold. Thus defects arising from heteroepitaxy are diminished.