| 发明名称 |
GROWING CRYSTAL |
| 摘要 |
<p>PURPOSE:To form epi-film with uniform thickness in surface of crystal by forming epi-film by placing dummy wafer which has the same constitution of crystal as substrate.</p> |
| 申请公布号 |
JPS5277584(A) |
申请公布日期 |
1977.06.30 |
| 申请号 |
JP19750153322 |
申请日期 |
1975.12.24 |
| 申请人 |
HITACHI LTD |
发明人 |
KASHIMURA TAKASHI;HIRAO MOTONAO;AOKI MASAO |
| 分类号 |
H01L29/80;H01L21/205;H01L21/338;H01L29/76;H01L29/812;H01L33/30 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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