| 摘要 |
PURPOSE:To uniformize the irradiation quantity of X-rays to a resist by forming a silicon carbide layer on a silicon substrate, forming beryllium of beryllium alloy on this layer and etching the same to expose the silicon carbide layer. CONSTITUTION:The silicon substrate 1 having, for example, about 500 to 1,000mum thickness is prepd. The silicon carbide layer 2 is formed to about 2 to 3mum on this substrate 1 by an epitaxial growth method. The beryllium film 3 is formed to about 15 to 25mum on this layer 2 by a vapor deposition method. A flange 4 of a ring shape made of ceramics, stainless steel, etc., is then adhered to the film 3 along the outer periphery thereof. The substrate 1 is selectively peeled by etching to expose the layer 2 and to obtain a window through which X-rays transmit. The expose to the resist applied on the substrate 1 is uniformized in this way and the finer patterns are accurately transferred onto the resist. |
