发明名称 Semiconductor crystal pulling system - using heat shield near fused zone for lower temp. gradient
摘要 <p>In a crucible-free zone melting process, the seed crystal with the recrystallised bar is pulled down from a fused zone at the semiconductor stock bar. The fused zone is maintained by an inductive heating coil. A heat shield which can be moved up to within a few mm from the coil to surround the recrystallised bar is made of a thermally stable heat insulating material. Keeps the temp. gradient beyond the fused zone low. The heat input required is reduced to an optimum value. The lower internal temps. result in a longer working life of the expensive equipment for large semiconductor bar pulling.</p>
申请公布号 DE2557186(A1) 申请公布日期 1977.06.23
申请号 DE19752557186 申请日期 1975.12.18
申请人 SIEMENS AG 发明人 KELLER,WOLFGANG,DR.
分类号 C30B13/20;C30B13/28;(IPC1-7):01J17/10 主分类号 C30B13/20
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