| 发明名称 |
SEMICONDUCTOR LASER ELEMENT |
| 摘要 |
<p>PURPOSE:To prolong the service life of a semiconductor laser element by covering in two layers the two cleavage surfaces of the crystals of a double hetero structure by means of Ga1-AlzAs and insulating film.</p> |
| 申请公布号 |
JPS5274292(A) |
申请公布日期 |
1977.06.22 |
| 申请号 |
JP19750149618 |
申请日期 |
1975.12.17 |
| 申请人 |
HITACHI LTD |
发明人 |
NAKAJIMA HISAO |
| 分类号 |
H01L33/30;H01L33/40;H01L33/44;H01S5/00;H01S5/028;H01S5/042 |
主分类号 |
H01L33/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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