发明名称 |
Method of MOS circuit fabrication |
摘要 |
An improved method of MOS circuit fabrication includes the consecutive steps of formation of a selected material on the surface of an underlying substrate, removal of the selected material from selected portions of the underlying substrate, and formation of insulating material between the selected material and the underlying substrate on the surface of the newly exposed underlying substrate. |
申请公布号 |
US4030952(A) |
申请公布日期 |
1977.06.21 |
申请号 |
US19750619994 |
申请日期 |
1975.10.06 |
申请人 |
FAIRCHILD CAMERA AND INSTRUMENT CORPORATION |
发明人 |
LUCE, ROBERT L.;PERRY, JOSEPH P.;SANSBURRY, JAMES D. |
分类号 |
H01L21/225;H01L23/31;H01L29/78;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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