HALBLEITERANORDNUNG

摘要

1,199,647. Semi-conductor devices. ALLMANNA SVENSKA ELEKTRISKA AB. 22 Dec., 1967 [27 Dec., 1966], No. 58288/67. Heading H1K. In a high power device consisting of a semiconductor system mounted on a base, with a counterelectrode pressed against the system by a clamping device through the intermediary of a rigid insulating body, a wall extending upwards from the base encloses the system, clamping device and insulating body. An elastic electrically insulating sealing member compressed between the insulating body and enclosure wall separates a space occupied by the semi-conductor system from that occupied by the clamping device. The semi-conductor system may be a germanium or silicon wafer with heavily doped surfaces, with surfaces coated with metals such as gold, silver, copper, aluminium, nickel lead, tin or alloys thereof by vapour or electrolytic deposition or by cathode sputtering, or with attached support plates of fernico, tungsten or molybdenum. In the illustrated embodiment a PNN+silicon wafer is aluminium-soldered to a molybdenum support 11 and has a gold antimony contact alloyed to its upper N+face. Support 11 is attached to base 15 of aluminium or copper by gold-tin solder or merely held in pressure contact with it through a gold or silver foil. Spring washers 17 exert pressure on the device via insulating body 18 which is of ceramic, asbestos, wood, or a resin filled with quartz, stone dust, or glass fibre. The sealing means is a resilient sleeve 27 of an elastomer such as silicon rubber, a fluoroelastomer, nitrile rubber, P.V.C. or soft epoxy or polyester resin. The counter electrode has a rod extension 19 of copper or aluminium sheathed with PTFE, silicon rubber or ceramic 22. After completing the assembly by flanging over the wall at 25 the device is vacuum impregnated with a silicone, epoxy, or unsaturated ester resin which is then heat cured.