发明名称 Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
摘要 An image sensor has image elements arranged in matrix form. Each of the elements possesses a pair of electrode arrangements comprising a first and a second electrode arrangement. The elements are photosensitive and form charge coupled shift registers in rows and columns. The first electrode arrangement of the pairs of electrode arrangements is, in each case, connected to a first control line and a second electrode arrangement of the pairs of electrode arrangements is connected to a second control line, the two control lines of a row or column may be connected by way of switches to drive lines and the switches may be operated by drive registers. The image sensor has output coupling devices for row-by-row and column-by-column output coupling. For a one-phase mode of operation, the first and second control lines of two adjacent rows and columns of image elements in each case form a first (second) common control line so that a first and a second common control line is connected to all the first and second pairs of electrodes of respective pairs of adjacent rows and columns, two pairs of drive lines are provided and each of the first control lines may be connected by way of switches to each of the two drive lines of the first pair of drive lines and each of the second control lines may be connected by way of switches to each of the two drive lines of the second pair of drive lines so that common control lines which are adjacent each other may be connected, in each case, to different pairs of drive lines.
申请公布号 US4031315(A) 申请公布日期 1977.06.21
申请号 US19750611624 申请日期 1975.09.09
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 PFLEIDERER, HANS-JOERG
分类号 H04N5/335;H01L27/148;H04N3/15;(IPC1-7):H04N3/14;H01L29/78;H01L27/14 主分类号 H04N5/335
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