APPARATUS AND METHOD FOR CONVERTING MOS CIRCUIT SIGNALS TO TTL CIRCUIT SIGNALS

摘要

A converter circuit for transferring binary information stored in a metal-oxide-semiconductor (MOS) field effect transistor (FET) memory cell array to conventional transistor-transistor-logic (TTL) circuits. The circuit converts the signals available at the output of a MOSFET memory array into signals suitable for manipulation by TTL circuits. The accurate transfer of stored information is facilitated by an external strobe signal, which activates the converter circuit during a relatively noise-free period of the MOSFET memory. A network is provided for maintaining the output signal of the MOSFET memory at the output of the converter circuit. Another network, responsive to an external signal provides a method of clearing the maintained binary signal in preparation for a period of further activity of the converter circuit. A network for electrically isolating the converter circuit from the output terminal is provided.