| 摘要 |
PURPOSE:To erase stored information without making a large current flow at the time of erasing, by a method wherein the stored information is erased by applying a high potential for a floating gate to a selection gate when the stored information is erased. CONSTITUTION:When stored information is erased, a substrate 101, a source 103, a control gate 108 and a drain 102 are grounded, and a high positive voltage is applied to a selection gate 111. Thereby electron 119 stored in a floating gate 106 is extracted into the gate 111 through a side part insulating film 109, and the stored information can be erased. In the above erasing operation, a high potential is applied to the gate 111 connected only with a high potential power supply, so that the excess current caused by the generation of electron positive hole pair does not generate. Hence excessive drain current in erasing operation does not flow, and the erasing operation by internal voltage increase is enabled. |
