发明名称 |
High aspect ratio P-N junctions by the thermal gradient zone melting technique |
摘要 |
A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are suitable for employment in X-ray and infrared detection and imaging. Each button preferably has the configuration of an equilateral triangle and the array preferably has a hexagonal configuration.
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申请公布号 |
US4030116(A) |
申请公布日期 |
1977.06.14 |
申请号 |
US19750577999 |
申请日期 |
1975.05.16 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
BLUMENFELD, SAMUEL M. |
分类号 |
C30B13/02;C30B13/06;H01L21/24;H01L31/00;(IPC1-7):H01L29/06;H01L29/04 |
主分类号 |
C30B13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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