发明名称 |
SEMICONDUCTOR CAPACITY ELEMENT |
摘要 |
PURPOSE:To reduce occupied area of capacity element by forming V groove groups on substrate surface through anisotropy etching and also by forming MOS capacity or pn-junction capacity along continuous surface including the slope of V groove. |
申请公布号 |
JPS5269589(A) |
申请公布日期 |
1977.06.09 |
申请号 |
JP19750145031 |
申请日期 |
1975.12.08 |
申请人 |
HITACHI LTD |
发明人 |
HOUYA KAZUO |
分类号 |
H01L27/04;H01L21/822;H01L29/94 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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