| 发明名称 |
DEVICE AND MANUFACTURE FOR HIGH VOLTAGE RESISTING SEMICONDUCTOR |
| 摘要 |
PURPOSE:To obtain IC of high voltage-resistance and high integraion density using ordinary techinque and without increasing manufacturing processes by burying part of epitaxial layer into substrate utilizing anisotropy etching techinque.
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| 申请公布号 |
JPS5269587(A) |
申请公布日期 |
1977.06.09 |
| 申请号 |
JP19750145041 |
申请日期 |
1975.12.08 |
| 申请人 |
HITACHI LTD |
发明人 |
SATOU TADANOBU;ARANO KAORU |
| 分类号 |
H01L21/8226;H01L21/331;H01L21/74;H01L21/761;H01L21/762;H01L27/02;H01L27/082;H01L27/092;H01L27/098;H01L29/06;H01L29/08;H01L29/73 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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