发明名称 |
VERFAHREN ZUM HERSTELLEN VON AUS SILICIUM ODER SILICIUMCARBID BESTEHENDEN, DIREKT-BEHEIZBAREN ROHREN |
摘要 |
Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current. |
申请公布号 |
DE2554399(A1) |
申请公布日期 |
1977.06.08 |
申请号 |
DE19752554399 |
申请日期 |
1975.12.03 |
申请人 |
SIEMENS AG |
发明人 |
DIETZE,WOLFGANG,DIPL.-CHEM.DR. |
分类号 |
C01B33/02;C01B33/035;C23C16/01;C23C16/22;C23C18/12;C30B31/10;C30B31/12;(IPC1-7):01J17/34;01J17/32 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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