| 摘要 |
1,175,122. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 11 April, 1967 [14 April, 1966 (2); 18 March, 1967], No. 16566/67. Heading H1K. A semiconductor device 7 is connected through one electrode to an end 6 of a supporting connecting pin 4, which is shielded from a second connecting pin 2, linked through a conductor 8 to a second electrode 14 of the device 7, by a reaction 10 of a third connecting pin 3. The third pin 3 also has a section 12 disposed on the opposite side of the device 7 to the shielding section 10, a third electrode 15 being connected to the section 12 through a conductor 9. An envelope 5 comprising, e.g., a solid mass of a thermosetting or thermoplastic material which may be laminated, a hollow gas-filled insulating shell of a material such as glass, ceramic &c., or a metal shell, completely surrounds the arrangement. The pins 3, 4, 5 may be flat, coplanar strips, or wires which are flattened at the contact areas. The shielding section 10 may extend out of the envelope to provide a fourth point of contact. The pin 3 may provide further shielding between the pins 2, 4 at the point where all three emerge from the envelope, or alternatively the pin 3 may emerge at rightangles to the other two pins. In either case the pin 3 may be connected to the electrode which is common to both input and output circuits, e.g. the emitter or base of a conventional transistor. The supporting pin 4 may be connected to the collector contact. Field-effect transistors of either insulated-gate or junetiongate types may be accommodated by the invention. The form of the device may be planar, mesa or alloy-diffusion. Electrodes are applied by alloying or vapour deposition, and the conductors 8, 9 can be joined thereto by thermocompression bonding or ultrasonic welding. The device 7 is connected to the supporting pin 4 by soldering and/or alloying. Suitable materials for the pins 2-4 include Ni wires, Fe/Co/Ni alloys, or Au plated strips, and the conductors 8, 9 may be Au or Al wires. |
