| 摘要 |
Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current. |
