Bulk channel charge-coupled device with blooming suppression

摘要

The invention relates to a charge-coupled device in which the information-forming charge carriers which are generated by absorption can be stored and/or transported mainly in the interior of the semiconductor layer. In order to prevent blooming effects as a result of local overexposure the lateral boundary of the semiconductor layer is constructed so that at least locally an overflow for excessive majority charge carriers is present in said boundary and at the same time a satisfactory drain of generated minority charge carriers is ensured.