| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR UNIT |
| 摘要 |
PURPOSE:To improve noise property of semiconductor element by removing insulation film of substrate main surface at final process and then by forming new insulation film plus poly Si film added by P-As or P.
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| 申请公布号 |
JPS5267969(A) |
申请公布日期 |
1977.06.06 |
| 申请号 |
JP19750144254 |
申请日期 |
1975.12.03 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
YASUJIMA TAKASHI;TAKAOKI KIYOSHI;YONEZAWA TOSHIO |
| 分类号 |
H01L29/73;H01L21/283;H01L21/314;H01L21/316;H01L21/321;H01L21/3213;H01L21/331;H01L21/8222 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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