| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR UNIT |
| 摘要 |
PURPOSE:To obtain high-integration MOSIC with use of substrate which is capable of making field inversion voltage equivalent to break-down voltage of junction. |
| 申请公布号 |
JPS5267276(A) |
申请公布日期 |
1977.06.03 |
| 申请号 |
JP19750130240 |
申请日期 |
1975.10.29 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KATOU SATOSHI |
| 分类号 |
H01L21/30;H01L21/027;H01L29/06;H01L29/417;H01L29/78 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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