发明名称 Thin film ferrite memories - on ceramic substrates with short access time and high bit density
摘要 <p>Thin film magnetic memories 25 x 10-4mm thick on ceramic substrates consist of ferrites containing iron (Fe2+ or Fe3+).oxide plus one or more oxides of Mg, Mn, Zn, Al, Ni, Yt, Li, Co and are formed by the decomposition of aq. alcoholic soln. of metallic nitrates at 400-700 degrees C followed by firing at 900-1250 degrees C. The coating/decomposition stages are repeated until the required thickness is obtained. The memories have short access time and high bit densities.</p>
申请公布号 FR2089083(A5) 申请公布日期 1972.01.07
申请号 FR19710011675 申请日期 1971.04.02
申请人 OMRON SYSTEMS INC 发明人
分类号 H01F10/20;(IPC1-7):11B5/00;11C11/00 主分类号 H01F10/20
代理机构 代理人
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