发明名称 Verfahren zur Zwischenverbindung elektrischer Baueinheiten
摘要 At least two overlapping or crossing levels of electrically isolated conductors are used to interconnect regions of a microelectronic device. To minimize shorts at regions of overlap or crossing, the lower conductor is provided with a pronouncedly trapezoidal cross section to facilitate maintenance of a uniform thickness of insulation between the two conductors. To achieve this cross section, the lower conductor is made of a material which etches slower in the thickness direction than in the direction normal thereto. Typically the lower conductor may be a binary metal alloy whose composition varies with thickness or polycrystalline silicon whose doping or crystalline disorder varies with thickness.
申请公布号 DE2132099(A1) 申请公布日期 1972.01.05
申请号 DE19712132099 申请日期 1971.06.28
申请人 WESTERN ELECTRIC CO.INC. 发明人 FLWOOD SMITH,GEORGE
分类号 H01L21/00;H01L21/3213;H01L21/768;H01L23/485;H01L23/522;H01L49/02 主分类号 H01L21/00
代理机构 代理人
主权项
地址