| 摘要 |
1475124 Field effect transistors SEMICONDUCTOR RESEARCH FOUNDATION and MITSUBISHI DENKI KK 17 May 1974 [19 May 1973] 22208/74 Heading H1K An PET comprises a semiconductor substrate comprising highly doped source, drain and gate regions, the source and drain regions being disposed at opposite faces of the substrate and at least one of them consisting of a plurality of elongate fingers which are so slender as to provide an inductance which interacts with the capacitance between fingers to form a travelling wave transmission line at the operating frequency. The gate region preferably also consists of elongate fingers parallel to those of the source and/or drain regions, and located in the bulk of the substrate or interlaced with the source or drain region fingers at a surface. The resistance of the fingers may be reduced by providing metal strips on them, the strips optionally consisting of or overlying high permeability magnetic material to increase inductance. In addition external inductors may be connected between adjacent fingers to modify the characteristics of the transmission line. Several devices in a common substrate may have their sources and/or drains interconnected by external inductors to form a network. |
