| 摘要 |
1475656 Etching INTERNATIONAL BUSINESS MACHINES CORP 15 May 1975 [28 May 1974] 20475/75 Heading B6J Silicon-containing materials, such as silicon, silicon dioxide, silicon nitride or silicon oxynitride, are etched with a hot melt made up of phosphorous pentoxide and orthophosphoric acid, the melt containing at least 12% by weight of phosphorus pentoxide. A resist mask comprises silicon, silicon dioxide or silicon nitride, on a silicon-containing layer to be etched, the mask and the layer being of different materials, and the etching temperature being such that the etchant etches the mask also, but at a slower rate than it etches the layer, so that small amounts of the mask material undesirably present on the areas to be etched are removed.
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