| 摘要 |
<p>1,132,748. Semi-conductor devices. SIEMENS - SCHUCKERTWERKE A.G. 21 June, 1966 [22 June, 1965], No. 27763/66. Heading H1K. In a semi-conductor device a pressure contact in the current path is made to or through a porous sintered body of high heat conductivity. The body, preferably having a porosity of 2-40% may consist of silver, copper, silver mixed with copper, cadmium, nickel, graphite, molybdenum sulphide or tungsten selenide; or of copper mixed with graphite, molybdenum sulphide or tungsten selenide. If desired, the body may comprise two layers. One of the layers may consist of or contain a lubricant and the other not, or one layer may be of a cheaper metal than the layer used as the pressure contact face. Examples of both kinds are given. A typical rectifier, illustrated in Fig. 4, consists of a silicon body alloyed with aluminium to a molybdenum plate 14 at one face and alloyed with gold antimony at the other. The assembly is clamped to the copper base through sintered disc 17 by the conventional spring assembly shown. In this case the upper contact is a molybdenum plate 20 hard soldered to copper rod 18. Alternatively, a sintered pressure plate may be sintered to the face of the molybdenum plate or disposed between it and the gold antimony layer. In other arrangements the silicon body with alloyed faces is disposed between metal diaphragms through the intermediary of sintered discs, the diaphragms being connected at their peripheries by a ceramic ring to form a housing. In Fig. 6, the element is soldered between two molybdenum members 40, 41, one of which, 40 has a silver plate attached to its lower face, and mounted in a similar housing. In this case a sintered silver plate 49 is clamped between one face of the housing and a contact member 48 designed to provide cooling.</p> |
