Compensation element for dynamic semiconductor stores, and method of operating the same

摘要

A compensation element and method for operating the same, for use with dynamic semiconductor stores, employing a main storage element operatively connected to a word line and a bit line, and an evaluator circuit operatively connected to the bit line, by means of which the storage element may be read out, comprising the steps of capacitively coupling a correcting voltage to the bit line which may be selectively applied thereto in response to signals on a compensation-selector line operative to control the application of said correcting voltage to the bit line whereby the same is raised to the most favorable middle potential of UBD=0.5 (UBO + UBl), in which UBO = read outvoltage resulting from storage of a binary "0", and UBl = read out voltage resulting from storage of a binary "1".