发明名称 |
Technique for preparation of stoichiometric III{14 V compound semiconductor surfaces |
摘要 |
A technique for preparing stoichiometric group III-V compound semiconductor surfaces involves a repetitive anodizing and etching sequence in an aqueous solution of appropriate pH and a basic solution, respectively. Surfaces treated in the described manner evidence a correct surface stoichiometry and minimum carbon contamination.
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申请公布号 |
US4026741(A) |
申请公布日期 |
1977.05.31 |
申请号 |
US19760696563 |
申请日期 |
1976.06.16 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
CHANG, CHUAN CHUNG;CITRIN, PAUL H.;SCHWARTZ, BERTRAM |
分类号 |
C25D11/32;H01L21/306;H01L21/3063;H01L21/316;(IPC1-7):B29C17/08;C25D11/00 |
主分类号 |
C25D11/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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