SELECTIVE INTRODUCTION OF IMPURITY IN COMPOUND SEMICONDUCTOR SUBSTRATE,申请号JP19750142714-传众专利搜索

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发明名称	SELECTIVE INTRODUCTION OF IMPURITY IN COMPOUND SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	JPS5265664(A)	申请公布日期	1977.05.31
申请号	JP19750142714	申请日期	1975.11.26
申请人	SHARP KK	发明人	HIJIKATA TOSHIKI;TAKAGI JIYUNKOU;INOUE TADAAKI;TOMITA KOUJI
分类号	H01L21/22;H01L21/265	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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