MEASUREMENT OF LIGHT EMITTING CHARACTERISTICS OF LIGHT EMITTING SEMICO NDUCTOR DEVICE

摘要

PURPOSE:To make possible the high-accuracy measurement of light emitting center concentrations and the life of minority carrier by thinnly forming the P type layer composing a light emitting semiconductor device by a diffusion method thereby separating the peak on the low energy side by N2 atoms and the peak based on interband absorption.