INSULATED GATE TYPE FIELD EFFECT TRANSISTOR AND ITS PRODUCTION,申请号JP19750136338-传众专利搜索

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发明名称	INSULATED GATE TYPE FIELD EFFECT TRANSISTOR AND ITS PRODUCTION
摘要
申请公布号	JPS5263074(A)	申请公布日期	1977.05.25
申请号	JP19750136338	申请日期	1975.11.14
申请人	KOGYO GIJUTSUIN JAPAN	发明人	HAYASHI YUTAKA
分类号	H01L29/78;H01L29/04;H01L29/06	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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