发明名称 Verfahren zum Herstellen von hochreinem Aluminiumnitrid
摘要 1,221,669. Aluminium nitride. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 22 May, 1968 [24 May, 1967; 25 May, 1967], No. 24493/68. Heading C1A. Aluminium nitride is made by (i) vaporizing an aluminium halide 2, e.g. AlCl 3 and conveying the vapour to a heated reaction zone 4 by means of an inert carrier gas, e.g. N 2 where the halide is converted to the monohalide which is conveyed to a zone of lower temperature, e.g. 800-1100‹ C. where the monohalide disproportionates to form atomic aluminium; (ii) introducing gaseous NH 3 , e.g. from a bubbler 1 into the reaction zone 4 by means of the inert carrier gas where it is thermally decomposed into atomic nitrogen and hydrogen. The atomic N and Al combine in the zone of lower temperature to form AIN. The reaction may be carried out in a quartz tube 3 and the atomic nitrogen is preferably activated by a source of ultra-violet radiation 5.
申请公布号 DE1767554(A1) 申请公布日期 1972.04.13
申请号 DE19681767554 申请日期 1968.05.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO.LTD. 发明人 AKASAKI,ISAMU;HASHIMOTO,MASAFUMI
分类号 C01B21/072;C22B21/00 主分类号 C01B21/072
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