| 摘要 |
1,076,919. Unijunction transistor arrays. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 3, 1966, No. 24732/66. Heading H1K. [Also in Division G4] A digital data store comprises a semiconductor slice at least one face of which is of a first conductivity type, with a high conductivity base region of said first type formed at said face to define a plurality of discrete areas of the first type arranged in rows and columns, and an emitter of the opposite conductivity type and a high conductivity second base region of the first type formed in each area so as to constitute with the area-defining base region a unijunction transistor storage cell. In the embodiment annular P-type emitter regions each with a radial resistive extension are first formed in an N-type body or epitaxial layer on an insulating or P-type substrate by planar diffusion techniques. The base regions are next formed by the same technique after which contacts are deposited through apertures in oxide masking. These consist of segmental contacts 10a, 10b (Fig. 5) to the emitter, contacts 7 to the remote ends of the resistive extensions, and a pair of contacts 9a, 9b to each second base region. The contacts 7 of each row are then interconnected by a deposited conductive strip extending between the pairs of contacts 9, 10 and the second base regions of each column interconnected by a continuous strip or by a series of strips joining the nearest contacts on adjacent second base regions (Fig. 6, not shown). |
