| 摘要 |
<p>PURPOSE:To obtain the thin-film two-terminal element which is expanded in the range of characteristic control and hardly generates the defects of the element by a short circuiting, film peeling, etc., by interposing an insulating film consisting of at least two layers of multilayered structures between a 1st conductor and a 2nd conductor. CONSTITUTION:The insulating film 3 of the thin-film two-terminal element formed by interposing the insulating film 3 between the 1st conductor 2 and the 2nd conductor 4 consists of at least two layers of the multilayered structures. The value of the current flowing in, for example, the element, is subjected to rate determining by the layer which current flows at least (any of the layers 31 to 33) and, therefore, the element has the characteristics that the inclination is large, i.e. the threshold characteristic is definite in a low-voltage region and the inclination is small, i.e. the control of gradation characteristics is easy in a high-voltage region. The control of solid-state properties over a wide range by the film forming conditions is possible in this way and the degree of freedom is designing the device is increased. Since the formation of the element as the hard and thick films is possible, the element is hardly susceptible to the mechanical damages and the decrease of the pinholes by the formation to the thicker films is possible.</p> |
