发明名称 Write amplification reduction through reliable writes during garbage collection
摘要 The various implementations described herein include systems, methods and/or devices used to enable write amplification reduction through reliable writes during garbage collection. In one aspect, lower page/upper page programming is used during write operations performed in response to a host command and coarse/fine programming is used during garbage collection.
申请公布号 US9361221(B1) 申请公布日期 2016.06.07
申请号 US201314029653 申请日期 2013.09.17
申请人 SANDISK TECHNOLOGIES INC. 发明人 Kankani Navneeth;Kwong Charles See Yeung
分类号 G06F12/00;G06F12/02;G06F12/08 主分类号 G06F12/00
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method of writing data in a storage system, the method comprising: performing a garbage collection operation, including re-writing data from one or more units of a storage medium to a first sequence of write units of the storage medium by: performing a coarse multi-bit write operation that partially programs each memory cell of a respective write unit with a plurality of bits, followed by a second multi-bit write operation that completes programming of each memory cell of the respective write unit with the plurality of bits; and performing a write operation in response to a host command, including writing data received from a computer system external to the storage system to a second sequence of write units of the storage medium by: performing a lower page write operation that partially programs each memory cell of a respective write unit with a single, respective lower page bit, followed by an upper page write operation that completes programming of each memory cell of the respective write unit with a respective upper page bit; wherein write operations in response to host commands are performed by performing respective lower page write operations followed by respective upper page write operations, and data writes performed in garbage collection operations comprise respective coarse multi-bit write operations followed by respective second multi-bit write operations that complete the programming of each memory cell to which data is written during the garbage collection operations.
地址 Plano TX US