| 发明名称 |
SINGLE CRYSTAL OF GALLIUM ARSENIDE WITHOUT DISLOCATION |
| 摘要 |
PURPOSE:To produce GaAs single crystal whose area of cross section perpendicular to growing direction is equal or above 5cm<2> and whose concentration of dislocation is specified by doping silicon in high concentration so that carrier concentration has specified value. |
| 申请公布号 |
JPS5262200(A) |
申请公布日期 |
1977.05.23 |
| 申请号 |
JP19750138395 |
申请日期 |
1975.11.17 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES |
发明人 |
FUJITA KEIICHIROU;KITOU NOBUHIRO |
| 分类号 |
C30B29/40;C30B11/00;C30B29/42 |
主分类号 |
C30B29/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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