| 发明名称 |
FIELD EFFECT TRANSISTOR CIRCUIT |
| 摘要 |
PURPOSE:To operate an FET circuit at a low voltage and high speed and reduce power consumption by supplying power to be supplied to a MOS circuit by way of a separately provided depression type MOS transistor in the MOS circuit using depression type MOS transistors as a load. |
| 申请公布号 |
JPS5261969(A) |
申请公布日期 |
1977.05.21 |
| 申请号 |
JP19750138474 |
申请日期 |
1975.11.17 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
OOURA TOSHIO |
| 分类号 |
H01L21/822;H01L21/8236;H01L27/04;H01L27/088;H01L29/78;H03K19/08 |
主分类号 |
H01L21/822 |
| 代理机构 |
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代理人 |
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| 地址 |
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