发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS PRODUCTION |
摘要 |
PURPOSE:To increase the current amplification factor of an I<2>L by connecting the injectors of the I<2>L to buried layers and connecting the base of the vertical transistor of the I<2>L to the buried layers or making the impurity concentration gradient of the base higher than that on the collector side on the emitter side, in an IC having the I<2>L and bipolar transistor. |
申请公布号 |
JPS5261978(A) |
申请公布日期 |
1977.05.21 |
申请号 |
JP19750139050 |
申请日期 |
1975.11.18 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMADA HARUO;YONEDA TADAO |
分类号 |
H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 |
主分类号 |
H01L21/8226 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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