发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS PRODUCTION
摘要 PURPOSE:To increase the current amplification factor of an I<2>L by connecting the injectors of the I<2>L to buried layers and connecting the base of the vertical transistor of the I<2>L to the buried layers or making the impurity concentration gradient of the base higher than that on the collector side on the emitter side, in an IC having the I<2>L and bipolar transistor.
申请公布号 JPS5261978(A) 申请公布日期 1977.05.21
申请号 JP19750139050 申请日期 1975.11.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMADA HARUO;YONEDA TADAO
分类号 H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 主分类号 H01L21/8226
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