| 摘要 |
<p>A layer thermoelectric battery is mfd. by evapn. onto a substrate of a layer of a thermoelectric semiconductor followed by annealing in an inert atmos. The semiconductor is a solid soln. of stoichiometric compsn. contg. Bi2Te3 and Sb2T3, with n-type conductivity and the annealing is carried out in zones so that adjacent conductivity branches have different temps. one being =300 degrees C whereas the adjacent branch is >=350 degrees C. The pref. solid soln. contains 50 mole % Sb2Te3. Used in thermoelectric convertors. The p- and n-type conductivity branches can be deposited in one operation, thereby improving their uniformity w.r.t. both compsn. and thickenss, and the width of the branches can be reduced.</p> |
