| 摘要 |
<p>1474285 Semi-conductor devices SIEMENS AG 1 Aug 1974 [17 Sept 1973] 34025/74 Heading H1K A radiation mask has a silicon body 1 coated with a carrier layer 2 having reference marks 5 and a masking pattern 6, the carrier layer 2 being 1 to 10 Á thick and transparent both to visible light and X-rays. The carrier layer material may be polyimide resin or silicon dioxide which is thermally grown or sputtered. A further supporting layer of a polyimide resin may be provided on the oxide layer. The reference marks 5, which are gold layers, are aligned with a complementary mark 8 on a semi-conductor wafer 7 bearing a photosensitive varnish 22, using a light beam 9 and a microscope 10.</p> |
