发明名称 |
Semiconductor ohmic contact |
摘要 |
A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.
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申请公布号 |
US4024569(A) |
申请公布日期 |
1977.05.17 |
申请号 |
US19750539532 |
申请日期 |
1975.01.08 |
申请人 |
RCA CORPORATION |
发明人 |
HAWRYLO, FRANK ZYGMUNT;KRESSEL, HENRY |
分类号 |
H01L29/207;H01L29/45;(IPC1-7):H01L29/16;H01L29/04;H01L29/16;H01L23/48 |
主分类号 |
H01L29/207 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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