PHOTO ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE,申请号JP19750135491-传众专利搜索

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发明名称	PHOTO ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	JPS5259579(A)	申请公布日期	1977.05.17
申请号	JP19750135491	申请日期	1975.11.11
申请人	TOKYO SHIBAURA ELECTRIC CO	发明人	NAGANUMA HIROO;OKABE MAKOTO
分类号	H01L21/027;H01L21/302	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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