| 发明名称 |
PRODUCTION OF GROUP IIIIV COMPOUND SEMICONDUCTOR EPITAXIAL GROWTH LAYE R |
| 摘要 |
PURPOSE:To obtain epitaxial layers of high purity when evaluated electrically, causing less number of dislocation and less number of abnormal growth despite growth on a substrate crystal. |
| 申请公布号 |
JPS5258365(A) |
申请公布日期 |
1977.05.13 |
| 申请号 |
JP19750134474 |
申请日期 |
1975.11.07 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
USUI AKIRA |
| 分类号 |
C30B25/02;C30B29/40;H01L21/20;H01L21/205;H01L33/30 |
主分类号 |
C30B25/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
