| 摘要 |
1526823 Photovoltaic cells WESTERN ELECTRIC CO Inc 6 Nov 1975 [8 Nov 1974 16 June 1974] 46032/75 Heading H1K A photovoltaic cell, Fig. 1, comprises an N-type light-transmissive c.d.s. layer 13 on a P-type InP layer 11 forming a heterojunction therewith, a light-transmissive electrode 16, e.g. of indium, and means 12, 14, 15 for establishing electrical contact with the InP layer 11. Preferably layer 12 is Au/Zn/Au alloy electrodeposited on a #111# oriented InP wafer which is cut from the single crystal grown by liquid encapsulation technique, and before a copper block 15 is secured to the layer 12, the latter is annealed in forming gas (N 2 +H 2 ). Vapour deposition of N-type c.d.s. on the InP substrate is carried out at pressures less than 10<SP>-5</SP> torr, the temperature of the substrate being maintained at 200-250‹ C. during the deposition. In a method of making a solar cell, Figs. 5, 6 (Fig. 7, not shown), a polycrystalline InP film 51 is either flash evaporated or grown by the chemical vapour deposition method on, e.g. an etched galvanized steel substrate 15 containing zinc, stainless steel or copper, this being followed by chemical vapour deposition or evaporation of N-type c.d.s. on the InP film 51. A thin glass sheet 58 is secured to the c.d.s. layer 53 by means of a transparent synthetic resin adhesive 57 after vapour deposition of electrical contacts 56 typically of chromium. An antireflection coating 59 is provided. It is stated that thermal annealing, preferably between 550‹ and 600‹ C. for a period of about 15 minutes, in an inert atmosphere containing traces of a reducing gas, e.g. 15% H 2 +85% N 2 improves the efficiency of the solar cell to 14% without unduly increasing the resistivity of c.d.s. |
