| 摘要 |
1473485 Epitaxial growth MITSUBISHI DENKI KK 2 Oct 1975 [7 Oct 1974] 40297/75 Heading B1S A method for epitaxially growing semi-insulating III-V compound semiconductor crystals on a substrate comprises pre-heating a saturated solution of a III-V compound at 800-950‹C in an inert gas and then growing a crystal of the III-V compound from the preheated solution on the substrate at a temperature below the melting point of the III-V compound while keeping the vapour pressure of the Group V element at 3.10<SP>-3</SP> to 2.10<SP>-2</SP> ats. The process may be carried out in a conventional tilting furnace with the addition of a source for the Group V element. The method is particularly suitable for the growth of GaAs, GaP, InP and GaAlAs. The materials may be doped with Sn or Cr. The preferred inert gas is hydrogen.
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