发明名称 |
METHOD FOR PRODUCTION OF SINTERED MATERIAL OF SILICON NITRIDE SYSTEM |
摘要 |
PURPOSE:To fabricate refractory structural material with superior high-temperature strength and resistance against thermal shock and corrosion by hotpressing a mixture of powder of silicon nitride system made of alpha-Si3N4 with no O2 and specified amount of metals without Si, powder of IIIB group metal oxides, and powder of Al2 O3. |
申请公布号 |
JPS5257100(A) |
申请公布日期 |
1977.05.11 |
申请号 |
JP19750133034 |
申请日期 |
1975.11.07 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
YONEYA KATSUTOSHI;TSUUE AKIHIKO;KUDOU HARUO;NISHIDA KATSUTOSHI |
分类号 |
C04B35/584;C01B21/06;C04B35/58 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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