发明名称 METHOD FOR PRODUCTION OF SINTERED MATERIAL OF SILICON NITRIDE SYSTEM
摘要 PURPOSE:To fabricate refractory structural material with superior high-temperature strength and resistance against thermal shock and corrosion by hotpressing a mixture of powder of silicon nitride system made of alpha-Si3N4 with no O2 and specified amount of metals without Si, powder of IIIB group metal oxides, and powder of Al2 O3.
申请公布号 JPS5257100(A) 申请公布日期 1977.05.11
申请号 JP19750133034 申请日期 1975.11.07
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 YONEYA KATSUTOSHI;TSUUE AKIHIKO;KUDOU HARUO;NISHIDA KATSUTOSHI
分类号 C04B35/584;C01B21/06;C04B35/58 主分类号 C04B35/584
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